Demonstration of a switchless class E/Fodd dual-band power amplifier

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 2002, Pages 1631-1634

  Bohn, Florian ^a   Kee, Scott ^a   Hajimiri, Ali ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; FREQUENCIES; GAIN MEASUREMENT; PASSIVE NETWORKS; RESONANCE; SWITCHING CIRCUITS;

DUAL BAND POWER AMPLIFIERS; POWER ADDED EFFICIENCY; SWITCHING AMPLIFIER;

POWER AMPLIFIERS;

EID: 0036065937     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. A 900MHz/1.8GHz CMOS transmitter for dual-band applications
2. A high efficiency single chain GaAs MESFET MMIC dual band power amplifier for GSM/DCS handsets
3. A 3.2-V operation single-chip dual-band AlGaAs/GaAs HBT MMIC power amplifier with active feedback circuit technique
4. Concurrent dual-band CMOS low-noise amplifiers and receiver architectures
5. 7-MHz, 1.1-kW demonstration of the new E/F(2,odd) switching amplifier class
6. A 2.4-GHz, 1.5-W, 2-V fully-integrated CMOS circular geometry active transformer power amplifier
7. Analysis of class-F and inverse class-F amplifiers
8. Class-E, class-C, and class-F power amplifiers based upon a finite number of harmonics