W-band InP/InGaAs/InP DHBT MMIC power amplifiers

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2002, Pages 917-920

  Wei, Yun ^a   Lee, Sangmin ^a   Sundararajan, Krishnan ^a   Dahlstrom, Mattias ^a   Urteaga, Miguel ^a   Rodwell, Mark ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTION BIPOLAR TRANSISTORS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SPURIOUS SIGNAL NOISE;

CASCODE AMPLIFIER; GAIN COMMON BASE AMPLIFIER;

POWER AMPLIFIERS;

EID: 0036063590     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. A 95GHz InP HEMT MMIC amplifier with 427mW power output
2. 98 GHz InP/InAsGas HBT amplifier with 26 dB gain
3. HBT MMIC 75 GHz and 78 GHz power amplifiers
4. Single-stage G-band HBT amplifier with 6.3 dB gain at 175 GHz
5. max = 425 GHz
6. Thermal properties and thermal instabilities of InP-based heterojunction bipolar transistors