High-power semiconductor 0.89-1.06-μm lasers with a low emission divergence based on strained quantum-well InGaAs/(Al)GaAs structures

Quantum Electronics

Volumn 32, Issue 3, 2002, Pages 213-215

  Bulaev, P V ^a   Marmalyuk, A A ^a   Padalitsa, A A ^a   Nikitin, D B ^a   Petrovskii, A V ^a   Zalevskii, I D ^a   Konyaev, V P ^a   Os'kin, V V ^a   Zverkov, M V ^a   Simakov, V A ^a   Zverev, G M ^a  

^a Polyus Research Institute   (Russian Federation)

Author keywords

Emission divergence; High power quantum well heterostructure laser; MOCVD epitaxy

Indexed keywords

EID: 0036056438     PISSN: 10637818     EISSN: None     Source Type: Journal    
DOI: 10.1070/QE2002v032n03ABEH002163     Document Type: Article

References (5)