Characterization of Geiger mode avalanche photodiodes for fluorescence decay measurements

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4650, Issue , 2002, Pages 55-66

  Jackson, J C ^a   Phelan, D ^b   Morrison, A P ^c   Redfern, R M ^b   Mathewson, A ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b NATIONAL UNIVERSITY OF IRELAND   (Ireland)

^c UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

APD; Avalanche Photodiode; Fluorescence decay; Geiger mode APD; GM APD; pn diode

Indexed keywords

AVALANCHE DIODES; CMOS INTEGRATED CIRCUITS; ELECTRIC BREAKDOWN; FLUORESCENCE; MAGNETIC FIELD EFFECTS; PHOTONS; QUANTUM EFFICIENCY; SILICON ON INSULATOR TECHNOLOGY;

AVALANCHE PHOTODIODES (APD);

PHOTODIODES;

EID: 0036055374     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.467676     Document Type: Article

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