Strain-compensated INP-based quantum cascade lasers with and without injector regions

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2002, Pages 735-738

  Scarpa, G ^a   Ulbrich, N ^a   Bohm G ^a   Abstreiter, G ^a   Amann, M C ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; ENERGY GAP; NEGATIVE RESISTANCE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; STRAIN; THERMAL EFFECTS; WAVEGUIDES;

QUANTUM CASCADE LASERS;

QUANTUM WELL LASERS;

EID: 0036053204     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

1. High performance quantum cascade lasers
2. High-temperature (T ≥ 470 K) pulsed operation of 5.5 μm quantum cascade lasers with high-reflection coating
3. Continuous wave operation of a mid-infrared semiconductor laser at room temperature
4. Band-gap engineering: From physics and materials to new semiconductor devices
5. Injectorless quantum-cascade lasers
6. High-temperature operation of distributed feedback quantum-cascade lasers at 5.3 μm
7. Intersubband staircase laser