High-performance all-active tapered 1550 nm InGaAsP-BH-FP lasers

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2002, Pages 27-30

  Mohrle M ^a   Roehle, H ^a   Sigmund, A ^a   Suna, A ^a   Reier, F ^a  

^a FRAUNHOFER HEINRICH HERTZ INSTITUTE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; FIBER OPTICS; HIGH TEMPERATURE EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM COMPOUNDS; SINGLE MODE FIBERS;

OPERATION CURRENTS;

SEMICONDUCTOR LASERS;

EID: 0036053154     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. Transmission characteristics of 1.3 μm Fabry-Perot laser diodes integrated with spot size converter for 2.5 Gbit/s application
2. High-coupling efficiency of a 1.3 μm spot-size converter integrated laser diode with pn-buried hetereostructure for high-temperature operation
3. 1.56 μm InGaAsP/InP tapered active layer multiquantum well laser with improved coupling to cleaved singlemode fibre
4. Tapered waveguide InGaAs/InGaAsP multi-quantum-well lasers
5. Spot-size converted laser diodes based on mode interference
6. Spot-size expanded high efficiency 1.3 μm MQW laser diodes with laterally tapered active stripe