Fabrication of two-dimensional inp photonic band-gap structures using inductively coupled plasma etching

Conference Proceedings-International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2002, Pages 429-432

  Djoudi, A ^a   Legouezigou L ^b   Hubert, S ^b   Sainson, S ^b   Moussant, C ^b   Chandouineau, J P ^b   Pommereau, F ^b   Duan, G H ^b  

^a NOKIA RESEARCH CENTER   (United States)

^b OPTO+   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRON BEAM LITHOGRAPHY; ENERGY GAP; FABRICATION; INDUCTIVELY COUPLED PLASMA; OPTICAL WAVEGUIDES; PLASMA ETCHING; SEMICONDUCTING INDIUM PHOSPHIDE;

PHOTONIC CRYSTALS (PC);

CRYSTALS;

EID: 0036049828     PISSN: 10928669     EISSN: None     Source Type: Journal    
DOI: 10.1109/ICIPRM.2002.1014459     Document Type: Article

References (9)

1. Microscopic uniformity in plasma etching