Importance of gate-recess structure to the cutoff frequency of ultra-high-speed InGaAs/InAlAs HEMTs

Conference Proceedings-International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2002, Pages 451-454

  Shinohara, Keisuke ^a   Yamashita, Yoshimi ^b   Endoh, Akira ^b   Hikosaka, Kohki ^b   Matsui, Toshiaki ^a   Hiyamizu, Satoshi ^c   Mimura, Takashi ^b  

^a NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

^c OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; FABRICATION; FREQUENCIES; GATES (TRANSISTOR); MONTE CARLO METHODS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES;

GATE-RECESS STRUCTURES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0036047948     PISSN: 10928669     EISSN: None     Source Type: Journal    
DOI: 10.1109/ICIPRM.2002.1014465     Document Type: Article

References (8)