Novel DRAM cell transistor with asymmetric source and drain junction profiles improving data retention characteristics

IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Volumn , Issue , 2002, Pages 176-177

  Ahn, S J ^a   Jung, G T ^a   Cho, C H ^a   Shin, S H ^a   Lee, J Y ^a   Lee, J G ^a   Jeong, H S ^a   Kim, Kinam ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC FIELD EFFECTS; ION BEAMS; LEAKAGE CURRENTS; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

CHANNEL EFFECTS; DRAIN JUNCTIONS;

TRANSISTORS;

EID: 0036047594     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)