Increasing the carrier mobility in P3HT by doping for use in Schottky barriers TFTs

Materials Research Society Symposium - Proceedings

Volumn 708, Issue , 2002, Pages 429-434

  Lloyd, G C R ^a   Sedghi, N ^a   Raja, M ^a   Di Lucrezia, R ^a   Higgins, S ^a   Eccleston, W ^a  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CALCULATIONS; CARRIER MOBILITY; DENSITY (SPECIFIC GRAVITY); DOPING (ADDITIVES); ELECTRIC CONTACTS; LEAKAGE CURRENTS; OXIDES; SCHOTTKY BARRIER DIODES; THIN FILM TRANSISTORS;

ALUMINIUM SCHOTTKY CONTACTS; DOPING DENSITY; FIELD EFFECT MOBILITY; GATE LEAKAGE CURRENTS; POLY-3-HEXYLTHIOPHENE; TITANIUM DEVICES;

ORGANIC POLYMERS;

EID: 0036047273     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)