Re-defining reliability assessment per new intra-via Cu leakage degradation

IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Volumn , Issue , 2002, Pages 222-223

  Song, W S ^a   Lee, C S ^a   Park, K C ^a   Suh, B S ^a   Kim, J W ^a   Kim, S Y ^a   Wee, Y J ^a   Choi, S M ^a   Kang, H K ^a   Kim, S U ^a   Suh, K P ^a  

^a Process Development Team   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AGGLOMERATION; ARGON; CHARGE CARRIERS; ELECTRIC FIELD EFFECTS; ELECTRONS; LEAKAGE CURRENTS; PLASMA APPLICATIONS; RELIABILITY; SPUTTERING; THERMAL STRESS; TRANSMISSION ELECTRON MICROSCOPY;

BIASED THERMAL STRESSING (BTS);

ELECTRIC CONNECTORS;

EID: 0036045612     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)