Ultra high switching speed 600 V thin wafer PT-IGBT based on new turn-off mechanism

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2002, Pages 285-288

  Matsudai, Tomoko ^a   Nakagawa, Akio ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; IMPACT IONIZATION; MOSFET DEVICES; SWITCHING CIRCUITS;

THIN WAFERS;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 0036045313     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. 600 V CSTBT having ultra low on-state voltage
2. A HiGT - A new generation high-conductivity IGBT
3. Advanced 60μm thin 600 V punch-through IGBT concept for extremely low forward voltage and low turn-off loss
4. The field stop IGBT (FS IGBT) - A new power device concept with a great improvement potential
5. Theoretical investigations on IGBT snubberless, self-clamped drain voltage switching-off operation under a large inductive load