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Volumn 4679, Issue , 2002, Pages 186-197

A simple thermal response model for a p-doped silicon substrate irradiated by 1.06 and 1.32 micron lasers

Author keywords

Damage irradiance thresholds; Lasers; Silicon

Indexed keywords

ENERGY GAP; LASER BEAM EFFECTS; LASER DAMAGE; LIGHT ABSORPTION; MATHEMATICAL MODELS; PHONONS; PHOTONS; SEMICONDUCTOR DOPING; SILICON; SUBSTRATES;

EID: 0036033903     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.461698     Document Type: Article
Times cited : (10)

References (15)
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    • Meyer, J.R.1    Kruer, M.R.2    Bartoli, F.J.3
  • 2
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  • 3
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    • Infra-red absorption of silicon
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    • Fan, H.Y.1    Becker, M.2
  • 4
    • 0005155474 scopus 로고
    • Optical properties of semiconductors: III. Infra-red transmission of silicon
    • Becker, M., Fan, H.Y.' Optical Properties of Semiconductors. III. Infra-Red Transmission of Silicon' Phys. Rev., 76, 1531, 1949.
    • (1949) Phys. Rev. , vol.76 , pp. 1531
    • Becker, M.1    Fan, H.Y.2
  • 7
    • 0018518450 scopus 로고
    • Absorption coefficient of silicon for solar cell calculations
    • Rajkanan, K., Singh, R. and Shewchun, J.' Absorption Coefficient of Silicon for Solar Cell Calculations' Solid State Electronics, Vol. 22, 1979.
    • (1979) Solid State Electronics , vol.22
    • Rajkanan, K.1    Singh, R.2    Shewchun, J.3
  • 11
    • 0000255322 scopus 로고
    • Lattice vibrations in silicon and germanium
    • Brockhouse, B.N.' Lattice Vibrations in Silicon and Germanium' Phys. Rev. Lett., 2, 256, 1959.
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    • Brockhouse, B.N.1
  • 12
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    • Simultaneous measurement of the two-photon coefficient and free-carrier cross section above the bandgap of crystalline silicon
    • Boggess, T.F., Bohnert, K.M., Mansour, K., Moss, S.C., Boyd, I.W., Smirl, A.L.' Simultaneous Measurement of the Two-Photon Coefficient and Free-Carrier Cross Section Above the Bandgap of Crystalline Silicon' IEEE: J. Quant. Electr., QE-22, 1986.
    • (1986) IEEE: J. Quant. Electr. , vol.QE-22
    • Boggess, T.F.1    Bohnert, K.M.2    Mansour, K.3    Moss, S.C.4    Boyd, I.W.5    Smirl, A.L.6
  • 13
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    • Intensity dependent absorption in semiconductors
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  • 14
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    • Aspens, D.E.' Optical Function of Intrinsic Si: Table of Refractive Index, Extinction Coefficient, and Absorption Coefficient vs Energy (0 to 400 eV)' Properties of Silicon, INSPEC, Institute of Electrical Engineers, London and New York, 1988.
    • (1988) Properties of Silicon
    • Aspens, D.E.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.