-
1
-
-
0019077227
-
Optical heating in semiconductors: Laser damage in Ge, Si, InSb and GaAs
-
Meyer, J.R., Kruer, MR. and Bartoli, F.J.' Optical Heating in Semiconductors: Laser Damage in Ge, Si, InSb and GaAs' J. Appl. Phys., Vol. 51, No. 10, 1980.
-
(1980)
J. Appl. Phys.
, vol.51
, Issue.10
-
-
Meyer, J.R.1
Kruer, M.R.2
Bartoli, F.J.3
-
2
-
-
0016941258
-
Thermal models for laser damage in InSb photovoltaic and photoconductive detectors
-
Kruer, M., Esterowitz, L., Allen, R., Bartoli, F.' Thermal Models for Laser Damage in InSb Photovoltaic and Photoconductive Detectors' Infrared Physics., Vol. 16, 1976.
-
(1976)
Infrared Physics
, vol.16
-
-
Kruer, M.1
Esterowitz, L.2
Allen, R.3
Bartoli, F.4
-
3
-
-
36149010966
-
Infra-red absorption of silicon
-
Fan, H.Y., Becker, M.' Infra-Red Absorption of Silicon' Phys. Rev., 78, 178, 1950.
-
(1950)
Phys. Rev.
, vol.78
, pp. 178
-
-
Fan, H.Y.1
Becker, M.2
-
4
-
-
0005155474
-
Optical properties of semiconductors: III. Infra-red transmission of silicon
-
Becker, M., Fan, H.Y.' Optical Properties of Semiconductors. III. Infra-Red Transmission of Silicon' Phys. Rev., 76, 1531, 1949.
-
(1949)
Phys. Rev.
, vol.76
, pp. 1531
-
-
Becker, M.1
Fan, H.Y.2
-
5
-
-
0005207306
-
Optical absorption below the gap in crystalline and amorphous silicon at high temperatures
-
Rome
-
Ackley, D.E., De Fonzo, A.P., Taut, J.' Optical Absorption Below the Gap in Crystalline and Amorphous Silicon at High Temperatures' Physics of Semiconductors: Proceedings of the 13th International Conference, Rome, 1976.
-
(1976)
Physics of Semiconductors: Proceedings of the 13th International Conference
-
-
Ackley, D.E.1
De Fonzo, A.P.2
Taut, J.3
-
7
-
-
0018518450
-
Absorption coefficient of silicon for solar cell calculations
-
Rajkanan, K., Singh, R. and Shewchun, J.' Absorption Coefficient of Silicon for Solar Cell Calculations' Solid State Electronics, Vol. 22, 1979.
-
(1979)
Solid State Electronics
, vol.22
-
-
Rajkanan, K.1
Singh, R.2
Shewchun, J.3
-
9
-
-
84952855175
-
Picosecond laser damage mechanisms at semiconductor surfaces
-
Becker, M.F., Walser, R.M., Jhee, Y.K., Sheng, D.Y.' Picosecond Laser Damage Mechanisms at Semiconductor Surfaces' Proceedings of SPIE, Picosecond Lasers and Applications, Vol 322, 1982.
-
(1982)
Proceedings of SPIE, Picosecond Lasers and Applications
, vol.322
-
-
Becker, M.F.1
Walser, R.M.2
Jhee, Y.K.3
Sheng, D.Y.4
-
10
-
-
36149023258
-
Fine structure in the absorption-edge spectrum of Si
-
Macfarlane, G.G., McLean, T.P., Quarrington, J.E., Roberts, V.' Fine Structure in the Absorption-Edge Spectrum of Si' Phys. Rev., Vol. I 11, No. 5, 1958.
-
(1958)
Phys. Rev.
, Issue.5
-
-
Macfarlane, G.G.1
McLean, T.P.2
Quarrington, J.E.3
Roberts, V.4
-
11
-
-
0000255322
-
Lattice vibrations in silicon and germanium
-
Brockhouse, B.N.' Lattice Vibrations in Silicon and Germanium' Phys. Rev. Lett., 2, 256, 1959.
-
(1959)
Phys. Rev. Lett.
, vol.2
, pp. 256
-
-
Brockhouse, B.N.1
-
12
-
-
0022665371
-
Simultaneous measurement of the two-photon coefficient and free-carrier cross section above the bandgap of crystalline silicon
-
Boggess, T.F., Bohnert, K.M., Mansour, K., Moss, S.C., Boyd, I.W., Smirl, A.L.' Simultaneous Measurement of the Two-Photon Coefficient and Free-Carrier Cross Section Above the Bandgap of Crystalline Silicon' IEEE: J. Quant. Electr., QE-22, 1986.
-
(1986)
IEEE: J. Quant. Electr.
, vol.QE-22
-
-
Boggess, T.F.1
Bohnert, K.M.2
Mansour, K.3
Moss, S.C.4
Boyd, I.W.5
Smirl, A.L.6
-
13
-
-
0343167215
-
Intensity dependent absorption in semiconductors
-
Stewart, A.F., Bass, M.' Intensity Dependent Absorption in Semiconductors' Appl. Phys. Lett., 37, 11, 1980.
-
(1980)
Appl. Phys. Lett.
, vol.37
, pp. 11
-
-
Stewart, A.F.1
Bass, M.2
-
14
-
-
0005207307
-
Optical function of intrinsic Si: Table of refractive index, extinction coefficient, and absorption coefficient vs energy (0 to 400 eV)
-
INSPEC, Institute of Electrical Engineers, London and New York
-
Aspens, D.E.' Optical Function of Intrinsic Si: Table of Refractive Index, Extinction Coefficient, and Absorption Coefficient vs Energy (0 to 400 eV)' Properties of Silicon, INSPEC, Institute of Electrical Engineers, London and New York, 1988.
-
(1988)
Properties of Silicon
-
-
Aspens, D.E.1
|