Enabling the 70 nm technology node with 193 nm altPSM lithography

Proceedings of SPIE-The International Society for Optical Engineering

Volumn 4692, Issue , 2002, Pages 262-273

  Liebmann, Lars ^a   Lund, Jennifer ^b   Graur, Ioana ^a   Heng, Fook Luen ^b   Fonseca, Carlos ^a   Culp, James ^a   Gabor, Allen ^a  

^a IBM MICROELECTRONICS   (United States)

^b IBM RESEARCH   (United States)

Author keywords

Design and process integration; Strong resolution enhancement techniques

Indexed keywords

COMPUTER AIDED DESIGN; DIFFRACTION; MASKS; OPTIMIZATION; PHASE SHIFT;

RESOLUTION ENHANCEMENT TECHNIQUES (RET);

LITHOGRAPHY;

EID: 0036030773     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.475663     Document Type: Article

References (17)

1. L. Liebmann, J. Lund, F. Heng, I. Graur, "Enabling alternating phase shifted mask designs for a full logic gate level," J. Microlith., Microfab., Microsyst., Vol. 1 No. 1, March 2002.
2. International Technology Roadmap For Semiconductors, 2001 Edition, http://public.itrs.net/.
3. C.J. Chen, T. Laidig, K.E. Wampler, R. Caldwell, "Optical proximity correction for intermediate pitch features using sub resolution scattering bars," J. Vac. Sci. Technol. B, Microelectron. Nanometer Struct. (USA) Vol. 15, No.6 Nov. Dec. 1997 P2426-33.
4. J. Bruce, M. Cross, L. Liebmann, S. Mansfield, and A. McGuire, "Assist Features-Challenges and Opportunities", ARCH Microlithography Symposium, (2000).
5. M. Levinson, N. Viswanathan, and R. Simpson, "Improving resolution in photolithography with a phase-shifting mask," IEEE Transactions on Electron Devices, vol. 29, pp. 1812-1846, Dec. 1982.
6. L. Liebmann, S. Mansfield, A. Wong, M. Lavin, W. Leipold, T. Dunham, "TCAD development for lithography resolution enhancement," IBM Journal of Research and Development v.45 n.5 September 2001 p.651-665.
7. A. Gabor et al., "Sub-resolution Assist Feature Implementation for High Performance Logic Gate-Level Lithography," to be published in Proc. SPIE vol. 4691 (2002).
8. L. Liebmann, "Resolution enhancement techniques in optical lithography, it's not just a mask problem," Proceedings of SPIE-The International Society for Optical Engineering v.4409 2001 p.23-32.
9. L. Liebmann, S. Mansfield, J. Bruce, M. Cross, I. Graur, A. McGuire, J. Krueger, D. Sunderling, "Optimizing style options for sub-resolution assist features," in Proc. SPIE (C. Progler, ed.), vol 4346, SPIE, 2001.
10. J.A. Torres, D. Chow, P. deDood, D.J. Albers, "RET Compliant Cell Generation for sub-130nm Processes," to be published in Proc. SPIE vol. 4692 (2002).
11. T. Brunner et al., "170nm gates fabricated by phase shift mask and top anti-reflector process", SPIE 1927, p. 16, (1993).
12. P. Agnello, T. Newman, E. Crabbe, S. Subbanna, E. Ganin, L. Liebmann, J. Comfort, D. Sunderland, "Phase edge lithography for sub-0.1um electrical channel length in a 200mm full cmos process," VLSI Symposium IEEE Cat. No. 95CH35781, p. 79, (1995).
13. L. Liebmann, J. Lund, F. Heng, I. Graur, "Enabling alternating phase shifted mask designs for a full logic gate level: Design rules and design rule checking," 38th Design Automation Conference. Proceedings-Design Automation Conference 2001 p.79-84 (IEEE cat n.01CH37232).
14. A.B. Kahng, S. Vaya, A. Zelikovsky, "New graph bipartizations for double exposure, bright field alternating phase shift mask layout," Proceedings of the ASP DAC 2001. Asia and South Pacific Design Automation Conference 2001 (Cat. No.01EX455) 2001 P133-8.
15. G. Galan, I. Graur, L. Liebmann, "Phase shifted design verification routine," US Patent No. 5,923,566 (July 1999).
16. F. Heng, L. Liebmann, J. Lund, "Application of automated design migration to alternating phase shift mask design," 2001 International Symposium on Physical Design. Proceedings of the International Symposium on Physical Design 2001 p.38-43.
17. M.D. Levenson, T. Ebihara, "Exposing the DUV SCAAM-75nm Imaging on the Cheap!," to be published in Proc. SPIE vol. 4692 (2002).