Stable e-beam metrology on ArF resist for advanced process control

Proceedings of SPIE-The International Society for Optical Engineering

Volumn 4690 I, Issue , 2002, Pages 598-605

  Ke, C M ^a   Yen, Anthony ^a   Yee, Jason ^b   Chu, Mico ^b   Fu, Steven ^b   Huang, Eros ^b   Yeh, Debbie ^b  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (United States)

^b KLA TENCOR CORPORATION   (United States)

Author keywords

193 nm resist; APC; ArF resist; Ebeam metrology; Feed forward; Process control; Shrinkage

Indexed keywords

ELECTRON BEAMS; IMAGE QUALITY; PLASMA ETCHING; PROCESS CONTROL;

ELECTRON BOMBARDMENT;

PHOTORESISTS;

EID: 0036030226     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.474260     Document Type: Article

References (6)

1. M. Neisser, et al., "Mechanism studies of SEM measurement effects on 193nm photoresists and the development of improved linewidth measurement methods," proceedings of Interface 2000, pp. 43-52.
2. L. Pain, et al., "Study of 193nm resist behavior under SEM inspection: How to reduce linewidth shrinkage effect," Proc. Of Interface 2000, pp. 233-248.
3. B. Su, A. Romana, "Study on 193nm Photoresist shrinkage after electron beam exposure," Proceedings of Interface 2000, pp. 247-264.
4. B. Su, et al.," 193nm resist shrinkage" Solid State Technology, pp. 52-57, May 2001.
5. P.H. Singer, Semiconductor International, April, 50, 1993.
6. D. Manos & D. Flamm, "Plasma Etching An Introduction" 1989 Academic Press.