Contrast enhancement materials for yield improvement in submicron i-line lithography

Proceedings of SPIE-The International Society for Optical Engineering

Volumn 4689 II, Issue , 2002, Pages 1017-1026

  Geary, Shane ^a   Thompson, Jim ^a   Capsuto, Elliott ^b  

^a ANALOG DEVICES   (Ireland)

^b SHIN ETSU CHEMICAL CO LTD   (Japan)

Author keywords

Cel; Cem; Contrast enhancement; Lithography; Process latitude; Yield

Indexed keywords

CMOS INTEGRATED CIRCUITS; COATINGS; COMPUTER SIMULATION; PHOTORESISTS;

CONTRAST ENHANCEMENT MATERIALS;

LITHOGRAPHY;

EID: 0036029123     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.473430     Document Type: Article

References (5)

1. A. Grassmann et al., "How focus budgets are spent: limitations of advanced i-line lithography", SPIE Vol. 2726, pp 386, 1996.
2. C.A. Mack, "Understanding Focus Effects in Submicron lithography, part 3: Methods for DOF improvement", SPIE 1674, pp 272, 1992.
3. K. Ronse et al., "CD Control: the limiting factor for i-line and DUV lithography?", OCG Interface, pp 241, 1995.
4. PROLITH/2 and ProDATA, FINLE Division of KLA-Tencor.
5. ACEM365iS is a trademark of Shin-Etsu MicroSi Inc.