Etchless fabrication of photonic crystals in silicon

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 5, 2002, Pages 2013-2016

  Murakowski, Janusz ^a   Pustai, David ^a   Prather, Dennis ^a  

^a UNIVERSITY OF DELAWARE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CRYSTAL GROWTH; CRYSTAL STRUCTURE; DIELECTRIC MATERIALS; ELECTRON BEAM LITHOGRAPHY; ETCHING; FABRICATION; OPTICAL MATERIALS; POLYMERIC MEMBRANES; REFRACTIVE INDEX; SPUTTERING; TWO DIMENSIONAL;

ETCHLESS FABRICATION; HIGH INDEX MATERIAL; PHOTONIC CRYSTALS; PLANAR PHOTONIC CRYSTAL;

CRYSTALS;

EID: 0036026372     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1505958     Document Type: Article

References (8)

1. E. Yablonovitch, Phys. Rev. Lett. 58, 2059 (1987).
2. C. C. Cheng, A. Scherer, R.-C. Tyan, Y. Fainman, G. Witzgall, and E. Yablonovitch, J. Vac. Sci. Technol. B 15, 2764 (1997).
3. U. Gruning, V. Lehman, S. Ottow, and K. Busch, Appl. Phys. Lett. 68, 747, (1996).
4. M. Tokushima, H. Kosaka, A. Tomita, and H. Yamada, Appl. Phys. Lett. 76, 952 (2000).
5. M. Loncar, T. Doll, J. Vuckovic, and A. Scherer, J. Lightwave Technol. 18, 1402 (2000).
6. A. Sharkawy, S. Shi, J. Murakowski, and D. Prather, Proc. SPIE 4655, 356 (2002).
7. J. Murakowski and D. Prather, Proc. SPIE 4440, 16 (2001).
8. Full 3D numerical simulations indicate that a 200 nm silicon slab perforated with holes of diameter 300 nm arranged in a triangular lattice with a lattice constant 500 nm, as fabricated, see Figs. 2 and 6, exhibits a photonic band gap between λ = 1.39 μm and λ = 1.77 μm, which is about 24% of the center frequency. The 1.55 μm wavelength, which is of particular interest to the telecommunication industry, is about in the middle of the band gap. Even if the hole size is significantly reduced to 200 nm, the band gap persists, but its width falls to ∼ 8% of the center frequency.