A novel sensing scheme for high-speed & high-density ferroelectric RAM

Journal of the Korean Physical Society

Volumn 40, Issue 4, 2002, Pages 697-700

  Choi, Mun Kyu ^a   Jeon, Byung Gil ^a   Song, Yoon Jong ^a   Kim, Kinam ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

FRAM

Indexed keywords

EID: 0036011361     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.40.697     Document Type: Conference Paper

References (4)

1. B.G. Jeon, et al., ISSCC Digest of Technical papers (San Francisco, Feb., 2000), p. 272.
2. T. Sumi, et al., ISSCC Digest of Technical Papers (San Francisco, Feb., 1994), p. 268.
3. Y. Chung, et al., in Proc. VLSI circuit Symp. (San Francisco, June, 1999), p. 97.
4. T. Miyakawa, et al., ISSCC Digest of Technical Papers (San Francisco, Feb., 1999), p. 104.