DC modeling of lateral high-voltage MOSFETs for high-voltage integrated circuits

Journal of the Korean Physical Society

Volumn 40, Issue 4, 2002, Pages 663-667

  Lee, Mueng Ryul ^a   Kwon, Oh Kyong ^a  

^a Hanyang University   (South Korea)

Author keywords

Channel region; DC model; Drift region; LDMOS; SOI

Indexed keywords

EID: 0036011356     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.40.663     Document Type: Conference Paper

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