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Volumn 229, Issue 1, 2002, Pages 513-517
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Deep-level transient spectroscopy and cathodoluminescence of CdSe/ZnSe QD structures grown on GaAs(100) by MBE
a
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Author keywords
[No Author keywords available]
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Indexed keywords
ACTIVATION ENERGY;
CADMIUM COMPOUNDS;
CATHODOLUMINESCENCE;
ELECTRON EMISSION;
GALLIUM ARSENIDE;
II-VI SEMICONDUCTORS;
III-V SEMICONDUCTORS;
MOLECULAR BEAM EPITAXY;
SELENIUM COMPOUNDS;
SEMICONDUCTING GALLIUM;
SEMICONDUCTOR QUANTUM DOTS;
ZINC SELENIDE;
CDSE QUANTUM DOTS;
CDSE/ZNSE;
DEEP-LEVELS;
DLTS MEASUREMENTS;
ELECTRON CAPTURE;
ELECTRON CHARGE;
FILLING CONDITIONS;
GAAS(1 0 0);
DEEP LEVEL TRANSIENT SPECTROSCOPY;
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EID: 0035994431
PISSN: 03701972
EISSN: None
Source Type: Journal
DOI: 10.1002/1521-3951(200201)229:1<513::aid-pssb513>3.0.co;2-%23 Document Type: Conference Paper |
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Times cited : (6)
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References (7)
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