Rapid solidification processes of semiconductors from highlyundercooled melts

Materials Science and Engineering: A

Volumn 304-306, Issue 1-2, 2001, Pages 231-234

  Aoyama, T ^a   Kuribayashi, K ^a  

^a JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

Author keywords

Germanium; Growth velocity; Silicon; Solid liquid interface

Indexed keywords

COOLING; CRYSTAL GROWTH; CRYSTAL MICROSTRUCTURE; ELECTROMAGNETISM; HIGH SPEED CAMERAS; MAGNETIC LEVITATION; NUCLEATION; PHASE INTERFACES; PHOTODIODES; RAPID SOLIDIFICATION; VIDEO CAMERAS;

DENDRITE GROWTH THEORY; ELECTROMAGNETIC LEVITATION; GRAIN REFINEMENT; SILICON GERMANIDE; UNDERCOOLING;

SEMICONDUCTING SILICON COMPOUNDS;

MICROSTRUCTURE; PHYSICAL PROPERTY;

EID: 0035978844     PISSN: 09215093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5093(00)01494-5     Document Type: Article

References (12)

1. Devaud G., Turnbull D. Acta Metall. 35:1987;765.
2. Lau C.F., Kui H.W. Acta Metall. Mater. 39:1991;323.
3. Lau C.F., Kui H.W. Acta Metall. Mater. 41:1993;1999.
4. Lau C.F., Kui H.W. Acta Metall. Mater. 42:1994;3811.
5. Aoyama T., Takamura Y., Kuribayashi K. Metall. Mater. Trans. A. 30A:1999;1333.
6. T. Aoyama, Y. Takamura, K. Kuribayashi, Metall. Mater. Trans. A, in press.
7. Battersby S.E., Cochrane R.F., Mullis A.M. J. Mater. Sci. 34:1999;2049.
8. Li D., Herlach D.M. J. Mater. Sci. 32:1997;1437.
9. Aoyama T., Takamura Y., Kuribayashi K. Jpn. J. Appl. Phys. 37:1998;L687.
10. Lipton J., Kurz W., Trivedi R. Acta Metall. 35:1987;957.
11. W.J. Boettinger, S.R. Coriell, R. Trivedi, in: R. Mehrabian, P.A. Parrish (Eds.), Rapid Solidification Processing - Principles and Technologies IV, Claitor's Baton Rouge, LA, 1988, p. 13.
12. Colligan G.A., Bayles B.S. Acta Metall. 10:1962;895.