SCOPUS 정보 검색 플랫폼

Electrochimica Acta

Volumn 46, Issue 18, 2001, Pages 2871-2877

The effects of dopant valence on the structure and electrical conductivity of LaInO3

(3) He, Hongpeng a Huang, Xuejie a,b Chen, Liquan a

a INSTITUTE OF PHYSICS (China)

b UNIVERSITY OF KIEL (Germany)

Author keywords

Electrical conductivity; LaInO3; Perovskite type oxide; Raman; XRD

Indexed keywords

BAND STRUCTURE; COMPOSITION EFFECTS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; PARTIAL PRESSURE; POINT DEFECTS; RAMAN SPECTROSCOPY; STRONTIUM; X RAY DIFFRACTION; ZIRCONIUM;

DOPANT VALENCE;

LANTHANUM COMPOUNDS;

EID: 0035978537 PISSN: 00134686 EISSN: None Source Type: Journal
DOI: 10.1016/S0013-4686(01)00508-4 Document Type: Article

Times cited : (30)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.