Comment on "surface morphology and electronic structure of Ge/Si(1 1 1) 7 × 7 system" [A. Lobo et al., Appl. Surf. Sci. 173 (2001) 270]

Applied Surface Science

Volumn 183, Issue 3-4, 2001, Pages 278-283

  Rosei, Federico ^a,c   Fontana, Stefano ^b  

^a AARHUS UNIVERSITY   (Denmark)

^b SINCROTRONE TRIESTE   (Italy)

^c UNIVERSITY OF ROME TOR VERGATA   (Italy)

Author keywords

Atomic force microscopy; GeSi (1 1 1) 7 7 system; Surface morphology

Indexed keywords

ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRONIC STRUCTURE; LOW ENERGY ELECTRON DIFFRACTION; MORPHOLOGY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; X RAY PHOTOELECTRON SPECTROSCOPY;

SINGLE NANOCRYSTALS;

NANOSTRUCTURED MATERIALS;

EID: 0035965616     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00590-6     Document Type: Note

References (15)

1. Electron-stimulated modification of Si surfaces
2. Photoemmission microscopy on WO3 thin films
3. Ge-Si intermixing in Ge quantum dots on Si
4. STM/AFM study of Ge quantum dots grown on Si(1 1 1)
5. Growth and characterization of Ge nanostructures on Si(1 1 1)