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Acta Materialia

Volumn 49, Issue 9, 2001, Pages 1599-1605

Dislocation evolution in epitaxial multilayers and graded composition buffers

(3) Wang, T C a Zhang, Y W b Chua, S J b

a INSTITUTE OF MECHANICS (China)

b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

Author keywords

Dislocations; Epitaxial multi layers

Indexed keywords

COMPOSITION EFFECTS; COMPUTER SIMULATION; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; MULTILAYERS; NUCLEATION; REACTION KINETICS; RELAXATION PROCESSES; SEMICONDUCTING GERMANIUM COMPOUNDS; STRAIN RATE;

ANNIHILATION RATES; DISLOCATION DYNAMICS; EPITAXIAL MULTILAYERS; EVOLUTION EQUATIONS;

HETEROJUNCTIONS;

EID: 0035947481 PISSN: 13596454 EISSN: None Source Type: Journal
DOI: 10.1016/S1359-6454(01)00070-2 Document Type: Article

Times cited : (7)

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