Electrical characteristics of a TaOxNy/ZrSixOy stack gate dielectric for metal-oxide-semiconductor device applications

Applied Physics Letters

Volumn 79, Issue 26, 2001, Pages 4408-4410

  Jung, Hyungsuk ^a   Yang, Hyundoek ^a   Im, Kiju ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035945141     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1427155     Document Type: Article

References (8)

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