Photoluminescence and X-ray absorption near edge structure of Eu ions doped SiO2 thin films

Materials Science and Engineering: B

Volumn 81, Issue 1-3, 2001, Pages 179-181

  Liu, F ^a   Zhu, M ^a   Liu, T ^b  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b INSTITUTE OF HIGH ENERGY PHYSICS   (China)

Author keywords

Eu ions; Photoluminescence; SiO2; XANES

Indexed keywords

ANNEALING; EUROPIUM; FILM PREPARATION; ION IMPLANTATION; LIGHT EMISSION; PHOTOLUMINESCENCE; SILICA; THIN FILMS;

CO-SPUTTERING METHOD; X-RAY ABSORPTION NEAR EDGE STRUCTURES (XANES);

AMORPHOUS FILMS;

EID: 0035942389     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00732-7     Document Type: Article

References (9)