Effects of oxygen coimplantation on the formation of donor centers in erbium-implanted silicon

Materials Science and Engineering: B

Volumn 81, Issue 1-3, 2001, Pages 74-76

  Emtsev, V V ^a   Poloskin, D S ^b   Shek, E I ^b   Sobolev, N A ^b   Kimerling, L C ^c  

^a UNIVERSITY OF AMSTERDAM   (Netherlands)

^b IOFFE INSTITUTE   (Russian Federation)

^c MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Erbium; Implantation; Oxygen; Silicon; Thermal donors

Indexed keywords

ANNEALING; CHEMICAL MODIFICATION; ERBIUM; ION IMPLANTATION; OXYGEN;

COIMPLANTATION; THERMAL DONORS;

SEMICONDUCTING SILICON;

EID: 0035942379     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00739-X     Document Type: Article

References (9)