Electron induced dissociation of hydrogen or deuterium - Silicon complexes in GaAs; application to the reliability of GaAs based electronic or optoelectronic devices

Materials Science and Engineering: B

Volumn 80, Issue 1-3, 2001, Pages 270-273

  Silvestre, S ^a   Bernard, D ^a   Meziere S ^a   Constant, E ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

Hot electron; Hydrogen; III V devices; Reliability

Indexed keywords

ANNEALING; DEUTERIUM; DISSOCIATION; ELECTRON BEAMS; HYDROGEN; HYDROGENATION; OPTOELECTRONIC DEVICES; PASSIVATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

DEUTERATION; HOT ELECTRONS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035932233     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00653-X     Document Type: Article

References (12)