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Thin Solid Films

Volumn 396, Issue 1-2, 2001, Pages 109-118

Photovoltaic junction properties of ultrathin films of phthalocyaninatooxovanadium (PcVO) on H-terminated n-Si(111)

(5) Trombach, N a Tada, H b Hiller, S a,b Schlettwein, D a,b Wohrle D a

a UNIVERSITY OF BREMEN (Germany)

b Ministry of Posts and Telecommunications (Japan)

Author keywords

Photovoltaic cells; Phthalocyanine; Semiconductors; Silicon

Indexed keywords

CHEMICAL SENSORS; ELECTRODES; FILM PREPARATION; HETEROJUNCTIONS; PHOTOCURRENTS; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING SILICON; SPECTRUM ANALYSIS; SUBSTRATES; VANADIUM COMPOUNDS;

PHOTOVOLTAIC JUNCTION PROPERTIES;

ULTRATHIN FILMS;

EID: 0035929021 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(01)01160-9 Document Type: Article

Times cited : (13)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.