Dynamical diffraction imaging of voids in nearly perfect silicon

Journal of Physics D: Applied Physics

Volumn 34, Issue 10 SPEC. ISS. A, 2001, Pages

  Tuomi, T ^a   Rantamaki R ^a   McNally, P J ^b   Lowney, D ^b   Danilewsky, A N ^c   Becker, P ^d  

^a AALTO UNIVERSITY   (Finland)

^b DUBLIN CITY UNIVERSITY   (Ireland)

^c Physikalisch Technische Bundesanstalt ^*

^d PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; IMAGING TECHNIQUES; POSITRONS; SILICON; TENSILE STRENGTH; X RAY DIFFRACTION;

MICRODEFECTS;

SINGLE CRYSTALS;

EID: 0035926831     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/34/10a/327     Document Type: Article

References (8)

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3. Nakayama K, Fujimoto H, Ishikawa T and Takeno H 2001 IEEE Trans. Instrum. Meas. 50 at press
4. Tuomi T, Naukkarinen K and Rabe P 1974 Phys. Status Solidi a 25 93-106
5. Macgillavry C H and Rieck G D (eds) 1962 Physical and chemical tables International Tables for X-ray Crystallography vol III (Birmingham: Kynoch) table 3.2.2E, pp 175-83
6. Tanner B 1976 X-ray Diffraction Topography (Oxford: Pergamon) pp 75-7
7. Penning P and Polder D 1961 Philips Res. Rep. 16 419-40
8. Dunia E, Malgrange C and Petroff J F 1980 Phil. Mag. A 41 291-306