A novel extraction method for the higher order components of channel current in a GaAs MESFET

Microwave and Optical Technology Letters

Volumn 29, Issue 2, 2001, Pages 114-117

  Kim, Youngsik ^a   Yi, Jaehyok ^a   Yang, Youngoo ^b   Kim, Bumman ^a  

^a Handong University   (South Korea)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

Channel current; MESFET; Nonlinear model; Volterra series

Indexed keywords

ELECTRIC CURRENT MEASUREMENT; ELECTRIC NETWORK ANALYSIS; HARMONIC ANALYSIS; INTERMODULATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS;

CHANNEL CURRENTS; TAYLOR COEFFICIENTS;

MESFET DEVICES;

EID: 0035917951     PISSN: 08952477     EISSN: None     Source Type: Journal    
DOI: 10.1002/mop.1101     Document Type: Article

References (8)

1. Accurate simulation of GaAs MESFET's intermodulation distortion using a new drain-source current model
2. A new simple extraction method for higher order components of channel current in GaAs MESFET
3. Third-order intermodulation distortion and gain compression in GaAs FETs
4. Intermodulation distortion analysis of MESFET amplifiers using the Volterra series representation
5. Modeling GaAs MESFET's for intermodulation distortion analysis
6. Modeling GaAs MESFET's for intermodulation analysis of mixer and amplifiers
7. A new method for determining the FET small-signal equivalent circuit