High speed evanescently coupled PIN photodiodes for hybridisation on silicon platform optimised with genetic algorithm

Electronics Letters

Volumn 37, Issue 15, 2001, Pages 973-975

  Giraudet, L ^a   Harari, J ^b   Magnin, V ^b   Pagnod, P ^a   Boucherez, E ^a   Decobert, J ^a   Bonnet Gamard, J ^a   Carpentier, D ^a   Jany, C ^a   Blache, F ^a   Decoster, D ^b  

^a OPTO+   (France)

^b INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

GENETIC ALGORITHMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL FIBER FABRICATION; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS; WAVEGUIDE COUPLERS;

EVANESCENT COUPLINGS; HYBRIDISATION;

PHOTODIODES;

EID: 0035913150     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010664     Document Type: Article

References (8)

1. 1.3 μm low cost plastic module for 622 Mbit/s transmission at 85°C
2. Long-wavelength multimode waveguide photodiodes suitable for hybrid optical module integrated with planar lightwave circuit
3. High-responsivity low-dark-current InGaAlAs waveguide photodiode with a symmetric double-core for optical access networks
4. High responsivity, low-dark-current, and high reliable operation of InGaAlAs waveguide photodiodes for optical hybrid integration
5. Reliability of planar waveguide photodiodes for optical subscriber systems
6. High-speed, high-power and high efficiency photodiode with evanescently coupled graded-index waveguide
7. Optical design of evanescently coupled, waveguide fed photodiodes for ultrawide-band applications
8. Design, optimisation and fabrication of side illuminated PIN photodetectors with high responsivity and high alignment tolerance for 1.3 μm and 1.55 μm wavelength use