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Volumn 79, Issue 25, 2001, Pages 4249-4251

Generation of 1.2 ps electrical pulses through parallel gating in ultrathin silicon photoconductive switches

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0035905294     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1426263     Document Type: Article
Times cited : (9)

References (17)
  • 12
    • 22244471916 scopus 로고    scopus 로고
    • Subsequent fabrication procedures for these ultrathin photoconductive switches have used selective back etching to thin the substrate, allowing the device to be patterned directly into integrated circuit topologies
    • Subsequent fabrication procedures for these ultrathin photoconductive switches have used selective back etching to thin the substrate, allowing the device to be patterned directly into integrated circuit topologies.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.