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Applied Surface Science

Volumn 179, Issue 1-4, 2001, Pages 49-54

Carbon-induced reconstructions on Si(1 1 1) investigated by RHEED and molecular dynamics

(6) Koitzsch, C a Conrad, D b Scheerschmidt, K b Scharmann, F c Maslarski, P c Pezoldt, J c

a UNIVERSITY OF FRIBOURG (Switzerland)

b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS (Germany)

c ILMENAU UNIVERSITY OF TECHNOLOGY (Germany)

Author keywords

Carbonization; Molecular dynamics; RHEED; SiC; Silicon reconstruction

Indexed keywords

ADSORPTION; CARBONIZATION; COMPUTER SIMULATION; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; MOLECULAR DYNAMICS; MOLECULAR STRUCTURE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR DEVICE MODELS;

CARBON-INDUCED RECONSTRUCTIONS; TERSOFF POTENTIAL;

SEMICONDUCTING SILICON;

EID: 0035898828 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(01)00262-8 Document Type: Article

Times cited : (7)

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