Effect of indium content on the normal-incident photoresponse of InGaAs/GaAs quantum-well infrared photodetectors

Applied Physics Letters

Volumn 78, Issue 16, 2001, Pages 2390-2392

  Hernando, J ^a   Sanchez Rojas J L ^a   Guzman A ^a   Munoz E ^a   Tijero, J M G ^b   Gonzalez D ^c   Aragon G ^c   Garcia R ^c  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b ETSA   (Spain)

^c UNIVERSITY OF CÁDIZ   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035896784     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1365951     Document Type: Article

References (11)

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