Junction symmetry effects in resonant tunneling through InAs nanocrystal quantum dots

Physica A: Statistical Mechanics and its Applications

Volumn 302, Issue 1-4, 2001, Pages 328-334

  Katz, David ^a   Kan, Shi Hai ^a   Banin, Uri ^a   Millo, Oded ^a  

^a HEBREW UNIVERSITY OF JERUSALEM   (Israel)

Author keywords

Quantum dots; Scanning tunneling microscopy (or STM); Semiconductor nanocrystals; Single electron tunneling; Tunneling spectroscopy

Indexed keywords

MATHEMATICAL MODELS; NANOSTRUCTURED MATERIALS; RESONANT TUNNELING; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; TUNNEL JUNCTIONS;

SEMICONDUCTOR NANOCRYSTALS; TUNNELING SPECTROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0035894717     PISSN: 03784371     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0378-4371(01)00450-2     Document Type: Conference Paper

References (14)