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Volumn 64, Issue 24, 2001, Pages

High-field electrical transport and breakdown in bundles of single-wall carbon nanotubes

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; METAL;

EID: 0035894519     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.64.241307     Document Type: Article
Times cited : (83)

References (28)
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  • 22
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    • Measured (formula presented) characteristics are all symmetric about the origin. We plot only the positive values for clarity
    • Measured (formula presented) characteristics are all symmetric about the origin. We plot only the positive values for clarity.
  • 23
    • 85038318023 scopus 로고    scopus 로고
    • Conducting tip-AFM measurements performed in our laboratory show that the voltage drops uniformly along an individual SWNT at high bias, thus confirming our assumption
    • Conducting tip-AFM measurements performed in our laboratory show that the voltage drops uniformly along an individual SWNT at high bias, thus confirming our assumption.
  • 25
    • 85038308499 scopus 로고    scopus 로고
    • Semiconducting SWNTs do not contribute strongly to the high-field transport because they are not conducting at zero gate voltage. However, high-field behavior in semiconducting SWNTs is poorly understood and is currently under investigation
    • Semiconducting SWNTs do not contribute strongly to the high-field transport because they are not conducting at zero gate voltage. However, high-field behavior in semiconducting SWNTs is poorly understood and is currently under investigation.
  • 26
    • 85038318865 scopus 로고    scopus 로고
    • This computation is performed assuming constant contact resistance as observed in our experiments. The amount by which saturation current is overestimated is proportional to the ratio of the contact voltage to the applied bias. In typical samples, the error can range from 50% to a factor of 2
    • This computation is performed assuming constant contact resistance as observed in our experiments. The amount by which saturation current is overestimated is proportional to the ratio of the contact voltage to the applied bias. In typical samples, the error can range from 50% to a factor of 2.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.