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Volumn 64, Issue 23, 2001, Pages 2333091-2333094
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Hopping conductivity in heavily doped n-type GaAs layers in the quantum Hall effect regime
a,b a a c |
Author keywords
[No Author keywords available]
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Indexed keywords
ARSENIC;
GADOLINIUM;
ARTICLE;
CONDUCTANCE;
DENSITY;
ELECTRON;
ENERGY;
MAGNETISM;
MOLECULAR INTERACTION;
QUANTUM MECHANICS;
TEMPERATURE DEPENDENCE;
THICKNESS;
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EID: 0035893971
PISSN: 01631829
EISSN: None
Source Type: Journal
DOI: 10.1103/physrevb.64.233309 Document Type: Article |
Times cited : (10)
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References (26)
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