Ambipolar drift of spatially separated electrons and holes

Physical Review B - Condensed Matter and Materials Physics

Volumn 64, Issue 8, 2001, Pages

  Beck, M ^a   Streb, D ^a   Vitzethum, M ^a   Kiesel, P ^a   Malzer, S ^a   Metzner, C ^a   Dohler G H ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ARTICLE; CALCULATION; DIFFUSION; DIODE; ELECTRIC FIELD; ELECTRON; MATHEMATICAL ANALYSIS; SEMICONDUCTOR; SIMULATION; THEORY;

EID: 0035880832     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.64.085307     Document Type: Article

References (11)

1. K H. Gulden, H. Lin, P. Kiesel, P. Riel, and G H. Döhler, Phys. Rev. Lett.66, 373 (1991).
2. G H. Döhler, Phys. Status Solidi52, 79 (1972);
3. Phys. Status SolidiG H. Döhler52, 533 (1972).
4. R B. Adler, A C. Smith, and R L. Longini, Introduction to Semiconductor Physics (Wiley, New York, 1964).
5. H. Schneider, E C. Larkins, J D. Ralston, J. Fleissner, G. Bender, and P. Koidl, Appl. Phys. Lett.60, 2648 (1992).
6. G. Livescu, D A B. Miller, T. Sizer, D J. Burrows, J E. Cunningham, A C. Gossard, and J H. English, Appl. Phys. Lett.54, 748 (1989).
7. P J. Poole, C C. Phillips, M. Henini, and O H. Hughes, Semicond. Sci. Technol.8, 1750 (1993).
8. G. Klem, P. Kiesel, A. Förster, and G H. Döhler, in Proceedings of the 23rd International Conference on the Physics of Semiconductors, edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996), p. 2299.
9. D. Streb, G. Klem, W. Fix, P. Kiesel, and G H. Döhler, Appl. Phys. Lett.71, 1501 (1997).
10. D. Streb, M. Vitzethum, P. Kiesel, M. Kneissl, and G H. Döhler, Superlattices Microstruct.25, 21 (1999).
11. M. Vitzethum, D. Streb, M. Beck, P. Kiesel, S. Malzer, and G H. Döhler (unpublished).