5.2% efficiency InAlGaP microcavity LEDs at 640 nm on Ge substrates

Electronics Letters

Volumn 37, Issue 6, 2001, Pages 377-378

  Modak, P ^a   D'Hondt, M ^b   Moerman, I ^a   Van Daele, P ^a   Millemans, P ^b   Demeester, P ^a  

^a GHENT UNIVERSITY   (Belgium)

^b Business Group Advanced Materials   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

MIRRORS; QUANTUM EFFICIENCY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

INJECTION CURRENT; MICROCAVITY; OPTICAL OUTPUT POWER;

LIGHT EMITTING DIODES;

EID: 0035868157     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010236     Document Type: Article

References (5)

1. Prospects of highly efficient AlGaInP based surface emitting type ring-LED for 50 and 156Mb/s POF data link systems
2. Resonant cavity light-emitting diodes
3. High brightness visible (660nm) resonant-cavity light-emitting diode
4. InAlGaP microcavity LEDs on Ge-substrates
5. AlGaInP visible resonant cavity light-emitting diodes