Transient effects in saturated Raman amplifiers

Electronics Letters

Volumn 37, Issue 6, 2001, Pages 371-373

  Chen, C J ^a   Wong, W S ^a  

^a Onetta Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFICATION; BANDWIDTH; COMPUTER SIMULATION; MATHEMATICAL MODELS; OPTICAL COMMUNICATION; RAMAN SCATTERING; WAVELENGTH DIVISION MULTIPLEXING;

RAMAN AMPLIFICATION; RAMAN AMPLIFIERS; TRANSIENT EFFECTS;

AMPLIFIERS (ELECTRONIC);

EID: 0035868156     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010256     Document Type: Article

References (5)

1. 100nm bandwidth flat-gain Raman amplifiers pumped and gain-equalised by 12-wavelength-channel WDM laser diode unit
2. 100Gb/s (10×10Gb/s) WDM transmission over 7200 km using distributed Raman amplification
3. Average inversion level, modeling, and physics of erbium-doped fiber amplifiers
4. Channel power transients in photonic networks caused by stimulated Raman scattering
5. Gain saturation in fiber Raman amplifiers due to stimulated Brillouin scattering