Frequency dependence of the charge carrier mobility in DH4T

Synthetic Metals

Volumn 119, Issue 1-3, 2001, Pages 463-464

  Grozema, F C ^a   Wegewijs, B ^a   De Haas, M P ^a   Siebbeles, L D A ^a   De Leeuw, D M ^b   Wilson, R ^c   Sirringhaus, H ^c  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Conductivity; Polythiophene and derivatives; Thin film transistors

Indexed keywords

CARRIER MOBILITY; CHARGE CARRIERS; DERIVATIVES; ELECTRIC FIELD EFFECTS; POLYMERS; THERMAL EFFECTS; THIN FILM TRANSISTORS;

FREQUENCY DEPENDENCE; POLYTHIOPHENE;

SYNTHETIC METALS;

EID: 0035867732     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0379-6779(00)00714-1     Document Type: Article

References (3)

1. 1 B. Wegewijs, M.P. de Haas, D.M. deLeeuw, R. Wilson, H. Sirringhaus, Synth. Met. 101 (1999) 534.
2. 2 O. Hilt, L.D.A. Siebbeles, Chem. Phys. Lett. 269 (1997) 257.
3. 3 A.M. van de Craats, L.D.A. Siebbeles, I. Bleyl, D. Haarer, Yu.A. Berlin, A.A. Zharikov, J.M. Warman, J. Phys. Chem. B, 102 (1998) 9625.