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Volumn 120, Issue 1-3, 2001, Pages 935-936
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Transport property of α-(BEDT-TTF)2I3 under high pressure-ultra narrow gap semiconductor
a
TOHO UNIVERSITY
(Japan)
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Author keywords
Hall effect; Magnetotransport; Organic conductor based on radical cation salts; Transport measurements
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Indexed keywords
CARRIER CONCENTRATION;
ELECTRIC CONDUCTIVITY OF SOLIDS;
ELECTRON MOBILITY;
ENERGY GAP;
HALL EFFECT;
HIGH PRESSURE EFFECTS;
THERMAL EFFECTS;
TRANSPORT PROPERTIES;
MAGNETOTRANSPORT;
SEMICONDUCTING ORGANIC COMPOUNDS;
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EID: 0035867599
PISSN: 03796779
EISSN: None
Source Type: Journal
DOI: 10.1016/S0379-6779(00)01535-6 Document Type: Article |
Times cited : (1)
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References (6)
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