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Volumn 120, Issue 1-3, 2001, Pages 935-936

Transport property of α-(BEDT-TTF)2I3 under high pressure-ultra narrow gap semiconductor

Author keywords

Hall effect; Magnetotransport; Organic conductor based on radical cation salts; Transport measurements

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRON MOBILITY; ENERGY GAP; HALL EFFECT; HIGH PRESSURE EFFECTS; THERMAL EFFECTS; TRANSPORT PROPERTIES;

EID: 0035867599     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0379-6779(00)01535-6     Document Type: Article
Times cited : (1)

References (6)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.