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Volumn 61, Issue 2-4, 2001, Pages 361-365

Common origin of doping-limiting mechanisms in IIB-VI compounds and alloys

Author keywords

A centre; Compensation; Doping; DX centre; II VI; N type; P type

Indexed keywords

ENERGY GAP; POINT DEFECTS; SEMICONDUCTOR DOPING; TERNARY SYSTEMS;

EID: 0035858663     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(01)00145-2     Document Type: Conference Paper
Times cited : (7)

References (17)
  • 1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.