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Volumn 61, Issue 2-4, 2001, Pages 361-365
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Common origin of doping-limiting mechanisms in IIB-VI compounds and alloys
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Author keywords
A centre; Compensation; Doping; DX centre; II VI; N type; P type
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Indexed keywords
ENERGY GAP;
POINT DEFECTS;
SEMICONDUCTOR DOPING;
TERNARY SYSTEMS;
VACANCIES;
SEMICONDUCTOR MATERIALS;
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EID: 0035858663
PISSN: 0042207X
EISSN: None
Source Type: Journal
DOI: 10.1016/S0042-207X(01)00145-2 Document Type: Conference Paper |
Times cited : (7)
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References (17)
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