Study of thin SiO2 and its interface formed by thermal oxidation of rf hydrogen plasma-cleaned silicon

Vacuum

Volumn 61, Issue 2-4, 2001, Pages 263-268

  Szekeres, A ^a   Paneva, A ^b   Alexandrova, S ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

^b UNIVERSITY OF SOFIA   (Bulgaria)

Author keywords

Hydrogen plasma treatment; Si oxidation; Si surface cleaning; SiO2 Si interface; Spectroscopic ellipsometry

Indexed keywords

ELLIPSOMETRY; HYDROGEN; PLASMA APPLICATIONS; SILICA; SILICON; SURFACE CLEANING; THERMOOXIDATION;

HYDROGEN PLASMA;

INTERFACES (MATERIALS);

EID: 0035858447     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(01)00127-0     Document Type: Conference Paper

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