2 Gbit/s transimpedance amplifier fabricated by 0.35 μm CMOS technologies

Electronics Letters

Volumn 37, Issue 19, 2001, Pages 1158-1160

  Kuo, C W ^a   Hsiao, C C ^a   Yang, S C ^a   Chan, Y J ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CAPACITORS; CMOS INTEGRATED CIRCUITS; FABRICATION; FREQUENCY RESPONSE; OPTICAL COMMUNICATION;

TRANSIMPEDANCE (TZ) AMPLIFIERS;

AMPLIFIERS (ELECTRONIC);

EID: 0035855740     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010797     Document Type: Article

References (5)

1. A MODFET-based optoelectronic integrated circuit receiver for optical interconnects
2. Monolithically integrated InP-based front-end photoreceivers
3. Fiber-optic multigigabit GaAs MIC front-end circuit with inductor peaking
4. Broad-band GaAs monolithic equalizing amplifier for multigigabit-per-second optical receivers
5. Bandwidth enhancement of transimpedance amplifier by a capacitive-peaking design