1480-1510 nm band Tm-doped fibre amplifier with high power conversion efficiency of 42%

Electronics Letters

Volumn 37, Issue 19, 2001, Pages 1157-1158

  Aozasa, S ^a   Masuda, H ^a   Ono, H ^a   Sakamoto, T ^a   Kanamori, T ^a   Ohishi, Y ^a   Shimizu, M ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BIT ERROR RATE; DOPING (ADDITIVES); OPTICAL PUMPING; POWER CONVERTERS; WAVELENGTH DIVISION MULTIPLEXING;

FIBRE AMPLIFIERS;

POWER AMPLIFIERS;

EID: 0035855721     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010781     Document Type: Article

References (5)

1. Thulium-doped silicate fiber amplifier at 1460-1520 nm
2. Laser-diode-pumped highly-efficient gain-shifted thulium-doped fiber amplifier operating in the 1480-1510 nm band
3. 48% Power conversion efficiency in a single-pumped gain-shifted thulium-doped fiber amplifier
4. Gain-shifted thulium-doped fibre amplifiers employing novel high concentration doping technique
5. High gain and low noise TDFA for 1500 nm band employing novel high concentration doping technique