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Applied Surface Science

Volumn 184, Issue 1-4, 2001, Pages 66-71

Growth chemistry of SiC alloys from SiF 4 -CH 4 plasmas

(4) Cicala, G a Capezzuto, P a Bruno, G a,b Rossi, M C b

a UNIVERSITY OF BARI (Italy)

b ROMA TRE UNIVERSITY (Italy)

Author keywords

Etching growth competition; PECVD; SiF 4 CH 4 gas precursors; Silicon carbon films

Indexed keywords

ETCHING; FILM GROWTH; MICROELECTRONICS; OPTOELECTRONIC DEVICES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; X RAY LITHOGRAPHY;

GAS PRECURSORS;

SILICON CARBIDE;

EID: 0035852197 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(01)00665-1 Document Type: Article

Times cited : (10)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.