Synthesis, crystal structure and physical properties of ZrNiSn semiconductor doped with Mn

Journal of Alloys and Compounds

Volumn 317-318, Issue , 2001, Pages 357-362

  Bodak, O I ^a   Padlyak, B V ^a,b   Stadnyk, Yu V ^a   Pierre, J ^c   Tkachuk, A V ^a   Romaka, L P ^a   Gorelenko, Yu K ^a  

^a IVAN FRANKO NATIONAL UNIVERSITY OF LVIV   (Ukraine)

^b UNIVERSITY OF GDA SK   (Poland)

^c LABORATOIRE DE CRISTALLOGRAPHIE   (France)

Author keywords

Electron paramagnetic resonance; Electronic transport, magnetisation; Impurities in semiconductors; Intermetallics

Indexed keywords

CRYSTAL IMPURITIES; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRON SPIN RESONANCE SPECTROSCOPY; MAGNETIC SUSCEPTIBILITY; MAGNETIZATION; MANGANESE; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR DOPING; SYNTHESIS (CHEMICAL); TERNARY SYSTEMS; ZIRCONIUM ALLOYS;

ZIRCONIUM NICKEL ANTIMONIDE;

SEMICONDUCTING INTERMETALLICS;

EID: 0035849054     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-8388(00)01438-9     Document Type: Article

References (17)