Bilayer splitting in the electronic structure of heavily overdoped Bi2Sr2CaCu2O8+δ

Physical Review Letters

Volumn 86, Issue 24, 2001, Pages 5550-5553

  Feng, D L ^a   Armitage, N P ^a   Lu, D H ^a   Damascelli, A ^a   Hu, J P ^a   Bogdanov, P ^a   Lanzara, A ^a   Ronning, F ^a   Shen, K M ^a   Eisaki, H ^a   Kim, C ^a   Shen, Z X ^a   Shimoyama, J I ^b   Kishio, K ^b  

^a SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BISMUTH COMPOUNDS; COMPUTER SIMULATION; ELECTRONIC STRUCTURE; FERMI SURFACE; HIGH TEMPERATURE SUPERCONDUCTORS; LOW ENERGY ELECTRON DIFFRACTION; MAGNETIC SUSCEPTIBILITY; PHOTOELECTRON SPECTROSCOPY; SINGLE CRYSTALS; SUPERCONDUCTIVITY; SYNCHROTRON RADIATION;

ANGLE RESOLVED PHOTOEMISSION SPECTROSCOPY; BILAYER ENERGY SPLITTING; BILAYER HUBBARD MODEL;

OXIDE SUPERCONDUCTORS;

EID: 0035844620     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.86.5550     Document Type: Article

References (19)